Photosensitive polyimide (PSPI) have been developed base on polyimide (PI). PSPI can be used as insulating and protective materials in the microelectronics industry due to the excellent insulating properties, thermal stability, and chemical stability. In this work, we designed a synthetic method to improve the regularity of the polymer chain segment sequence. Quaternary block copolymerized precursors were prepared using condensation polymerization of poly (acid amid). A photosensitive poly (acid amid) salts (co-PAS) was also synthesized to produce patterns with photochemical reaction. After imidization, the resolution of copolymerized PSPI (co-PSPI) pattern was in the range of 16 μm–110 μm. Partial photoreactive cross-linking structure was maintained to improve the thermal stability of co-PSPI. The co-PSPI exhibited higher glass transition temperatures (327.0°C–358.8°C) than copolymerized PI (307.4°C–332.9°C). This work provides the study on the synthesis and properties of quaternary copolymerized PI and PSPI.
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