ZnO nanowire array films, composed of well aligned ZnO nanowires ∼200 nm in diameter and 1 μm in length, were successfully synthesised on Mg doped gallium nitride by hydrothermal method. In addition, the films possess quite flatten surface. In the synthesised process, there was no catalyst that had been used. Growth conditions were comprehensively discussed in the process of aqueous solution method. It was found that the length of ZnO nanowires and the thickness of the film could be tunable by altering solution concentration and growth time. Such ZnO film assembled with vertically aligned nanowire may have potential applications as UV light emitting diodes.
DuanX. and LieberC. M.: ‘Laser-assisted catalytic growth of single crystal GaN nanowires’, J. Am. Chem. Soc., 2000, 122, 188–189. doi: 10.1021/ja993713u
3.
LiY., MengG. W., ZhangL. D. and PhillippF.: ‘Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties’, Appl. Phys. Lett., 2000, 76, (15), 2011. doi: 10.1063/1.126238
4.
YangY. H., WangB., XuN. S. and YangG. W.: ‘Field emission of one-dimensional micro- and nanostructures of zinc oxide’, Appl. Phys. Lett., 2006, 89, 043108. doi: 10.1063/1.2234838
5.
WangX., SummersC. J. and WangZ. L.: ‘Large-scale hexagonal-patterned growth of aligned ZnO nanorods for nano-optoelectronics and nanosensor arrays’, Nano. Lett., 2004, 4, (3), 423–426. doi: 10.1021/nl035102c
6.
DingM., ZhaoD. X., YaoB., LiZ. P. and XuX. J.: ‘Ultraviolet photodetector based on heterojunction of n-ZnO microwire/p-GaN film’, RSC Adv., 2015, 5, 908–912. doi: 10.1039/C4RA11163J
7.
SaitoN., HanedaH., SekiguchiT., OhashiN., SakaguchiI. and KoumotoK.: ‘Low-temperature fabrication of light-emitting zinc oxide micropatterns using self-assembled monolayers’, Adv. Mater., 2002, 14, (6), 418–421. doi: 10.1002/1521-4095(20020318)14:6<418::AID-ADMA418>3.0.CO;2-K
8.
FuaQ. M., CaoaW., LiaG. W., LinaZ. D., ChenaZ., XuaC. B., TubY. F. and MaaZ. B.: ‘Blue/green electroluminescence from a ZnO nanorods/p-GaN heterojunction light emitting diode under different reverse bias’, Appl. Surf. Sci., 2014, 293, 225–228. doi: 10.1016/j.apsusc.2013.12.139
9.
OzgürU., AlivovY. I., LiuC., TekeA., ReshchikovM. A., Dog˘anS., AvrutinV., ChoS. J. and MorkoçH.: ‘A comprehensive review of ZnO materials and devices’, J. Appl. Phys., 2005, 98, 041301. doi: 10.1063/1.1992666
10.
WuJ. S. and XueD. F.: ‘Progress of science and technology of ZnO as advanced material’, Sci. Adv. Mater., 2011, 3, (2), 127–149. doi: 10.1166/sam.2011.1144
11.
DayanaN. J., SainkarbS. R., KarekaraR. N. and AiyeraR. C.: ‘Formulation and characterization of ZnO:Sb thick-film gas sensors’, Thin Solid Films, 1998, 325, 254–258. doi: 10.1016/S0040-6090(98)00501-X
ReadingA. H., RichardsonJ. J., PanC. C., NakamuraS. and DenBaarsS. P.: ‘High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy’, Opt. Express, 2011, 20, (S1), A13–A19. doi: 10.1364/OE.20.000A13
14.
KimJ. H., KimE. M., ThomsonD. D., DenBaarsS. P. and LangeF. F.: ‘Heteroepitaxial ZnO Thin Films on GaN-Buffered Al2O3 (0001) Substrates by Low-Temperature Hydrothermal Synthesis at 90°C’, Adv. Funct. Mater., 2007, 17, 463–471. doi: 10.1002/adfm.200600103
JhaS. K., LuanC., ToC. H., KutsayO.Jr, J K., ZapienJ. A., BelloI. and LeeS.: ‘ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis’, Appl. Phys. Lett., 2012, 101, 211116. doi: 10.1063/1.4764061
17.
HassanJ. J., MahdiM. A., YusofY., Abu-HassanH., HassanZ., Al-AttarH. A. and MonkmanA. P.: ‘Fabrication of ZnO nanorod/p-GaN high-brightness UV LED by microwave-assisted chemical bath deposition with Zn(OH)2-PVA nanocomposites as seed layer’, Opt. Mater., 2013, 35, 1035–1041. doi: 10.1016/j.optmat.2012.12.006
ZhangL., LiQ., ShangL., ZhangZ., HuangR. and ZhaoF.: ‘Electroluminescence from n-ZnO:Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers’, J. Phys. D Appl. Phys., 2012, 45, 485103. doi: 10.1088/0022-3727/45/48/485103
20.
ZhangX. M., LuM. Y., ZhangY., ChenL. J. and WangZ. L.: ‘Fabrication of a high-brightness blue-light-emitting diode using a ZnO-nanowire array grown on p-GaN thin film’, Adv. Mater., 2009, 21, 2767–2770. doi: 10.1002/adma.200802686
21.
ChenC. H., ChangS. J., ChangS. P., LiM. J., ChenI. C., HsuehT. J. and HsuC. L.: ‘Electroluminescence from n-ZnO nanowires/p-GaN heterostructure light-emitting diodes’, Appl. Phys. Lett., 2009, 95, 223101. doi: 10.1063/1.3263720
LupanO., PauportéT. and VianaB.: ‘Low-voltage UV-electroluminescence from ZnO-nanowire array/p-GaN light-emitting diodes’, Adv. Mater., 2010, 22, 3298–3302. doi: 10.1002/adma.201000611
24.
ParkW., LeeC. H., ChaeJ. H., LeeD. H. and YiG. C.: ‘Ultrafine ZnO nanowire electronic device arrays fabricated by selective metal-organic chemical vapor deposition’, Small, 2009, 5, (2), 181–184. doi: 10.1002/smll.200800617
25.
ShiZ. F., WuB., CaiX. P., XiaX. C., ZhangS. K., YinW., WangH., WangJ., DongX., ZhangY. T., ZhangB. L. and DuG. T.: ‘Photofacilitated controllable growth of ZnO films using photoassisted metal organic chemical vapor deposition’, Cryst. Growth Des., 2012, 12, (9), 4417–4424. doi: 10.1021/cg300609f
26.
DondapatiH., SantiagoK. and PradhanA. K.: ‘Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering’, J. Appl. Phys., 2013, 114, 143506. doi: 10.1063/1.4824751
27.
ShenaY. W., ChenaX., YanaX. Q., YiaF., BaiaZ. M., ZhengaX., LinaP. and ZhangY.: ‘Low-voltage blue light emission from n-ZnO/p-GaN heterojunction formed by RF magnetron sputtering method’, Curr. Appl. Phys., 2014, 14, (3), 345–348. doi: 10.1016/j.cap.2013.12.011
28.
Padilla-RuedaD., VadilloJ. M. and LasernaJ. J.: ‘Room temperature pulsed laser deposited ZnO thin films as photoluminiscence gas sensors’, Appl. Surf. Sci., 2012, 259, 806–810. doi: 10.1016/j.apsusc.2012.07.128
29.
XuS., WeiY., KirkhamM., LiuJ., MaiW., DavidovicD., SnyderR. L. and WangZ. L.: ‘Patterned growth of vertically aligned ZnO nanowire arrays on inorganic substrates at low temperature without catalyst’, J. Am. Chem. Soc., 2008, 130, 14958–14959. doi: 10.1021/ja806952j
30.
YanC. L. and XueD.: ‘Morphosynthesis of hierarchical hydrozincite with tunable surface architectures and hollow zinc oxide’, J. Phys. Chem. B, 2006, 110B, (23), 11076–11080. doi: 10.1021/jp060357a
31.
SunC. T. and XueD. F.: ‘Tailoring anisotropic morphology at the nanoregime: surface bonding motif determines the morphology transformation of ZnO nanostructures’, J. Phys. Chem. C, 2013, 117C, (10), 5505–5511. doi: 10.1021/jp401170j
32.
XueD., LiK., LiuJ., SunC. and ChenK.: ‘Crystallization and functionality of inorganic materials’, Mater. Res. Bull., 2012, 47, (10), 2838–2842. doi: 10.1016/j.materresbull.2012.04.112
33.
SunC. and XueD.: ‘Chemical bonding theory of single crystal growth and its application to phi 3″ YAG bulk crystal’, Cryst. Eng. Commun., 2014, 16, (11), 2129–2135. doi: 10.1039/c3ce42292e
34.
KongY. C., YuD. P., ZhangB., FangW. and FengS. Q.: ‘Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approach’, Appl. Phys. Lett., 2001, 78, (4), 407–409. doi: 10.1063/1.1342050
35.
LiZ. Q., XiongY. J. and XieY.: ‘Selected-control synthesis of ZnO nanowires and nanorods via a PEG-assisted route’, Inorg. Chem., 2003, 42, (24), 8105–8109. doi: 10.1021/ic034029q
36.
ChenS. J., LiuY. C., ShaoC. L., MuR., LuY. M., ZhangJ. Y., ShenD. Z. and FanX. W.: ‘Structural and optical properties of uniform ZnO nanosheets’, Adv. Mater., 2005, 17, (5), 586–590. doi: 10.1002/adma.200401263
37.
ZengH., DuanG. T., LiY., YangS. K., XuX. X. and CaiW. P.: ‘Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: defect origins and emission controls’, Adv. Funct. Mater., 2010, 20, (4), 561–572. doi: 10.1002/adfm.200901884
