For the first time to our knowledge, the use of a Raman microspectrometer is proposed for recording electroluminescence spectra as well as generating complete electroluminescence maps of areas selected on the surface of a pseudomorphic high electron mobility transistor (PHEMT). More particularly, this microspectrometer was used to investigate the impact ionization effect in different regions of the PHEMT located between gate and drain.
HuangJ. C.JacksonG. S.ShanfieldS.PlatzkerA.SaledasP. K. and WeichertC, “An AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor With Improved Breakdown Voltage for X-and Ku-Band Power Applications”, in IEEE Trans. Microwave Theory Techn.41, 752 (1993).
2.
AnielF.BoucaudP.SylvestreA.CrozatP.JulienF. H.AddeR. and JinY, J. Appl. Phys.77, 2184 (1995).
3.
MeneghessoG.GraveT.ManfrediM.PavesiM.CanaliC. and ZanoniE, in Proceedings of WOCSDICE 98, Chantilly, France (1998), pp. 24–25.
4.
ShigekawaN.EnokiT.FurutaT. and ItoH, Indium Phosphide Related Materials Conference, Schwabisch Gmind, Germany (1996), pp. 681–684.
5.
DasM. B., IEEE Trans. Electron Devices32, 18 (1985).
6.
MeneghessoG.Di CarloA.ManfrediM.PavesiM.CanaliC. and ZanoniE, 56th Device Related Compound Conference, Charlottesville, South Carolina (1998), pp. 36–37.
7.
HedoireJ.SherifK.De JaegerJ. C.LefebvreM. and SalmerG, presented at the 8th Semiconductor Devices Simulation Workshop, Duisburg, Germany (1994).
8.
PearsallT. P.NahoryR. E. and PollackM. A, Appl. Phys. Lett.27, 330 (1975).
9.
DhondtF.BarretteJ. and RollandP. A, Gallium Arsenide Application Symposium, Amsterdam (1998), pp. 307–312.
